특징

-Thickness : 200 ?1200μm / Bow : +/-350μm / Warp : 350μm
- Applications : Semiconductor materilas, Solar-cell materials (Silicon, Polysilicon, SiC etc)
                    Silicon-related epitaxial materials, Ion-implantation sample
                    Chemical compound semiconductor (GaAs Epi, GaN Epi, InP, Ga etc) 
- Sample sizes : 3~8 inch

상세설명

- Measures Thickness, TTV, Bow, Warp and site and global Flatness (ASTM compliance)

- Measures all materials including Si, GaAs, Ge, InP, SiC

- Full 500 micron thickness measurement range without re-calibration

- 2-D /3-D Mapping software