상세설명
SPECIFICATIONS
| Deposition materials | Oxide materials, TCO materials, Metal materials |
|---|---|
| Substrate size | Piece to 8 inch |
| Product yield | 1 wafer/ run(@8 inch) |
| Sputter gun size | 3inch to 12inch |
| Plasma power | RF, DC or Pulsed DC power |
| Pressure control | Auto pressure control (throttle valve and baratron gauge) |
| Substrate rotation | 0~ 20 rpm |
| Process gases | Ar, O2, N2 |
| Substate Temperature | RT to Max. 450℃ |
| Vacuum pump | TMP or Cryo pump + Rotary pump or Dry pump |
| Ultimate pressure | < 5.0E-7 Torr |
| Option | Loadlock chamber, Plasma cleaning, Substrate cooling, Substrate temperature max.650℃ |
| Control | PC control (UPRO software) or Manual |
