상세설명
SPECIFICATIONS
| Deposition materials | Oxide materials, TCO materials, Metal materials |
|---|---|
| Substrate size | Piece to 8 inch |
| Product yield | 1 cassette (25wafers/ run) |
| Sputter gun size | 4inch to 12 inch |
| No. of Process Chamber | Up to 5 nos. PM |
| Transfer chamber | Vacuum robot |
| Cassette chamber | 1 cassette |
| Plasma power | RF, DC or Pulsed DC power |
| Pressure control | Auto pressure control (throttle valve and baratron gauge) |
| Process gases | Ar, O2, N2 |
| Substate Temperature | RT to Max. 450℃ |
| Vacuum pump | TMP or Cryo pump + Rotary pump or Dry pump |
| Ultimate pressure | < 5.0E-7 Torr |
| Option | Substrate rotation, Substrate cooling, Plasma cleaning, Substrate temperature max.650℃ |
| Control | PC control (UPRO software) |
